技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
45A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
100mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
270W
Typical Gate Charge Qg @ Vgs
105nC
Maximum Gate Source Voltage Vgs
-10, +25V
Minimum Operating Temperature
-55°C
Forward Voltage Vf
3.5V
Maximum Operating Temperature
200°C
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Width
5.15mm
Automotive Standard
No
產品詳情
Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and Compact systems.
醞釀。 創造。 合作
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暫時無法取得庫存資訊。
246.80 MOP
246.80 MOP Each (Supplied in a Tube) (不含稅)
生產包 (管子)
1
246.80 MOP
246.80 MOP Each (Supplied in a Tube) (不含稅)
暫時無法取得庫存資訊。
生產包 (管子)
1
醞釀。 創造。 合作
免費加入
無隱藏費用！
技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
45A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
100mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
270W
Typical Gate Charge Qg @ Vgs
105nC
Maximum Gate Source Voltage Vgs
-10, +25V
Minimum Operating Temperature
-55°C
Forward Voltage Vf
3.5V
Maximum Operating Temperature
200°C
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Width
5.15mm
Automotive Standard
No
產品詳情
Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and Compact systems.
醞釀。 創造。 合作
免費加入
無隱藏費用！
