技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
65A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.59Ω
Channel Mode
Depletion
Forward Voltage Vf
3.5V
Typical Gate Charge Qg @ Vgs
122nC
Maximum Power Dissipation Pd
318W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
200°C
Length
15.75mm
Height
34.95mm
Standards/Approvals
No
Automotive Standard
No
產品詳情
The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
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暫時無法取得庫存資訊。
10,278.80 MOP
342.628 MOP Each (In a Tube of 30) (不含稅)
30
10,278.80 MOP
342.628 MOP Each (In a Tube of 30) (不含稅)
暫時無法取得庫存資訊。
30
| 數量 | 單價 | 每管子 |
|---|---|---|
| 30 - 120 | 342.628 MOP | 10,278.82 MOP |
| 150+ | 335.778 MOP | 10,073.34 MOP |
醞釀。 創造。 合作
免費加入
無隱藏費用！
技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
65A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.59Ω
Channel Mode
Depletion
Forward Voltage Vf
3.5V
Typical Gate Charge Qg @ Vgs
122nC
Maximum Power Dissipation Pd
318W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
200°C
Length
15.75mm
Height
34.95mm
Standards/Approvals
No
Automotive Standard
No
產品詳情
The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
醞釀。 創造。 合作
免費加入
無隱藏費用！
