技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET Modules
Channel Type
Type N
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
1200V
Package Type
H2PAK-7
Series
SCT
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
0.105Ω
Channel Mode
Depletion
產品詳情
The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using STs Advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
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暫時無法取得庫存資訊。
P.O.A.
Each (On a Reel of 1000) (不含稅)
1000
P.O.A.
Each (On a Reel of 1000) (不含稅)
暫時無法取得庫存資訊。
1000
醞釀。 創造。 合作
免費加入
無隱藏費用！
技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET Modules
Channel Type
Type N
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
1200V
Package Type
H2PAK-7
Series
SCT
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
0.105Ω
Channel Mode
Depletion
產品詳情
The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using STs Advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
醞釀。 創造。 合作
免費加入
無隱藏費用！
