技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
116A
Maximum Drain Source Voltage Vds
650V
Package Type
H2PAK
Series
SCTH90
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
24mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
484W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
157nC
Maximum Gate Source Voltage Vgs
22V
Maximum Operating Temperature
175°C
Height
10.4mm
Length
15.25mm
Standards/Approvals
No
Width
4.8mm
Automotive Standard
No
產品詳情
The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 116A and drain to source resistance 18m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
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暫時無法取得庫存資訊。
344,331.30 MOP
344.331 MOP Each (On a Reel of 1000) (不含稅)
1000
344,331.30 MOP
344.331 MOP Each (On a Reel of 1000) (不含稅)
暫時無法取得庫存資訊。
1000
| 數量 | 單價 | 每卷 |
|---|---|---|
| 1000 - 4000 | 344.331 MOP | 344,331.27 MOP |
| 5000+ | 337.445 MOP | 337,444.64 MOP |
醞釀。 創造。 合作
免費加入
無隱藏費用！
技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
116A
Maximum Drain Source Voltage Vds
650V
Package Type
H2PAK
Series
SCTH90
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
24mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
484W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
157nC
Maximum Gate Source Voltage Vgs
22V
Maximum Operating Temperature
175°C
Height
10.4mm
Length
15.25mm
Standards/Approvals
No
Width
4.8mm
Automotive Standard
No
產品詳情
The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 116A and drain to source resistance 18m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
醞釀。 創造。 合作
免費加入
無隱藏費用！
