技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
650V
Series
SCTL35N65G2V
Package Type
PowerFLAT
Mount Type
Surface
Pin Count
4
Maximum Drain Source Resistance Rds
67mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
22V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
73nC
Maximum Power Dissipation Pd
417W
Forward Voltage Vf
3.3V
Maximum Operating Temperature
175°C
Length
8.1mm
Standards/Approvals
No
Width
8.1mm
Height
950μm
Automotive Standard
No
產品詳情
The STMicroelectronics SCTL35N65G2V silicon carbide power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.
醞釀。 創造。 合作
免費加入
無隱藏費用！
暫時無法取得庫存資訊。
568,138.20 MOP
189.379 MOP Each (On a Reel of 3000) (不含稅)
3000
568,138.20 MOP
189.379 MOP Each (On a Reel of 3000) (不含稅)
暫時無法取得庫存資訊。
3000
| 數量 | 單價 | 每卷 |
|---|---|---|
| 3000 - 12000 | 189.379 MOP | 568,138.25 MOP |
| 15000+ | 185.592 MOP | 556,775.54 MOP |
醞釀。 創造。 合作
免費加入
無隱藏費用！
技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
650V
Series
SCTL35N65G2V
Package Type
PowerFLAT
Mount Type
Surface
Pin Count
4
Maximum Drain Source Resistance Rds
67mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
22V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
73nC
Maximum Power Dissipation Pd
417W
Forward Voltage Vf
3.3V
Maximum Operating Temperature
175°C
Length
8.1mm
Standards/Approvals
No
Width
8.1mm
Height
950μm
Automotive Standard
No
產品詳情
The STMicroelectronics SCTL35N65G2V silicon carbide power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.
醞釀。 創造。 合作
免費加入
無隱藏費用！
