技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
650V
Package Type
PowerFLAT
Series
SCTL35N65G2V
Mount Type
Surface
Pin Count
4
Maximum Drain Source Resistance Rds
67mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
73nC
Maximum Power Dissipation Pd
417W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
3.3V
Maximum Operating Temperature
175°C
Length
8.1mm
Height
0.95mm
Standards/Approvals
No
Automotive Standard
No
產品詳情
The STMicroelectronics SCTL35N65G2V silicon carbide power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.
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暫時無法取得庫存資訊。
452,269.20 MOP
150.756 MOP Each (On a Reel of 3000) (不含稅)
3000
452,269.20 MOP
150.756 MOP Each (On a Reel of 3000) (不含稅)
暫時無法取得庫存資訊。
3000
| 數量 | 單價 | 每卷 |
|---|---|---|
| 3000 - 12000 | 150.756 MOP | 452,269.24 MOP |
| 15000+ | 147.741 MOP | 443,223.92 MOP |
醞釀。 創造。 合作
免費加入
無隱藏費用！
技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
650V
Package Type
PowerFLAT
Series
SCTL35N65G2V
Mount Type
Surface
Pin Count
4
Maximum Drain Source Resistance Rds
67mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
73nC
Maximum Power Dissipation Pd
417W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
3.3V
Maximum Operating Temperature
175°C
Length
8.1mm
Height
0.95mm
Standards/Approvals
No
Automotive Standard
No
產品詳情
The STMicroelectronics SCTL35N65G2V silicon carbide power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.
醞釀。 創造。 合作
免費加入
無隱藏費用！
