技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
36A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCTW40N
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
700mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
278W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
13nC
Maximum Gate Source Voltage Vgs
22V
Forward Voltage Vf
3.3V
Maximum Operating Temperature
175°C
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Width
5.15mm
Automotive Standard
No
產品詳情
The STMicroelectronics silicon carbide power MOSFET device has been developed using STs advanced and innovative 2nd generation Sic MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
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暫時無法取得庫存資訊。
6,166.70 MOP
205.557 MOP Each (In a Tube of 30) (不含稅)
30
6,166.70 MOP
205.557 MOP Each (In a Tube of 30) (不含稅)
暫時無法取得庫存資訊。
30
| 數量 | 單價 | 每管子 |
|---|---|---|
| 30 - 90 | 205.557 MOP | 6,166.72 MOP |
| 120 - 240 | 199.388 MOP | 5,981.64 MOP |
| 270 - 480 | 193.404 MOP | 5,802.13 MOP |
| 510+ | 189.54 MOP | 5,686.20 MOP |
醞釀。 創造。 合作
免費加入
無隱藏費用！
技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
36A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCTW40N
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
700mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
278W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
13nC
Maximum Gate Source Voltage Vgs
22V
Forward Voltage Vf
3.3V
Maximum Operating Temperature
175°C
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Width
5.15mm
Automotive Standard
No
產品詳情
The STMicroelectronics silicon carbide power MOSFET device has been developed using STs advanced and innovative 2nd generation Sic MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
醞釀。 創造。 合作
免費加入
無隱藏費用！
