技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
1200V
Series
SCT
Package Type
Hip-247
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.105Ω
Channel Mode
Depletion
Maximum Gate Source Voltage Vgs
22V
Forward Voltage Vf
3.4V
Maximum Power Dissipation Pd
290W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
63nC
Maximum Operating Temperature
200°C
Length
15.75mm
Standards/Approvals
No
Width
5.15mm
Height
34.95mm
Automotive Standard
No
產品詳情
The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using STs advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
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暫時無法取得庫存資訊。
218.40 MOP
218.36 MOP Each (不含稅)
標準
1
218.40 MOP
218.36 MOP Each (不含稅)
暫時無法取得庫存資訊。
標準
1
| 數量 | 單價 |
|---|---|
| 1 - 7 | 218.36 MOP |
| 8 - 14 | 212.80 MOP |
| 15+ | 206.62 MOP |
醞釀。 創造。 合作
免費加入
無隱藏費用！
技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
1200V
Series
SCT
Package Type
Hip-247
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.105Ω
Channel Mode
Depletion
Maximum Gate Source Voltage Vgs
22V
Forward Voltage Vf
3.4V
Maximum Power Dissipation Pd
290W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
63nC
Maximum Operating Temperature
200°C
Length
15.75mm
Standards/Approvals
No
Width
5.15mm
Height
34.95mm
Automotive Standard
No
產品詳情
The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using STs advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
醞釀。 創造。 合作
免費加入
無隱藏費用！
