技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
73mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
389W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
94nC
Maximum Gate Source Voltage Vgs
18V
Forward Voltage Vf
3V
Maximum Operating Temperature
200°C
Height
5mm
Length
34.8mm
Standards/Approvals
UL
Width
15.6mm
Automotive Standard
AEC-Q101
產品詳情
The STMicroelectronics silicon carbide Power MOSFET device has been developed using STs advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. It can be used in Switching mode power supply, DC-DC converters and Industrial motor control.
暫時無法取得庫存資訊。
9,967.70 MOP
332.257 MOP Each (In a Tube of 30) (不含稅)
30
9,967.70 MOP
332.257 MOP Each (In a Tube of 30) (不含稅)
暫時無法取得庫存資訊。
30
| 數量 | 單價 | 每管子 |
|---|---|---|
| 30 - 30 | 332.257 MOP | 9,967.72 MOP |
| 60 - 60 | 322.289 MOP | 9,668.67 MOP |
| 90+ | 312.616 MOP | 9,378.48 MOP |
技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
73mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
389W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
94nC
Maximum Gate Source Voltage Vgs
18V
Forward Voltage Vf
3V
Maximum Operating Temperature
200°C
Height
5mm
Length
34.8mm
Standards/Approvals
UL
Width
15.6mm
Automotive Standard
AEC-Q101
產品詳情
The STMicroelectronics silicon carbide Power MOSFET device has been developed using STs advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. It can be used in Switching mode power supply, DC-DC converters and Industrial motor control.