技術文件
規格
Brand
STMicroelectronicsProduct Type
MDmesh Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-263
Series
STB11NM80
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
0.4Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
150W
Minimum Operating Temperature
-65°C
Typical Gate Charge Qg @ Vgs
43.6nC
Maximum Gate Source Voltage Vgs
30V
Forward Voltage Vf
0.86V
Maximum Operating Temperature
150°C
Height
4.37mm
Length
10.4mm
Standards/Approvals
No
Width
9.35mm
Automotive Standard
No
產品詳情
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
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暫時無法取得庫存資訊。
45,795.40 MOP
45.795 MOP Each (On a Reel of 1000) (不含稅)
1000
45,795.40 MOP
45.795 MOP Each (On a Reel of 1000) (不含稅)
暫時無法取得庫存資訊。
1000
| 數量 | 單價 | 每卷 |
|---|---|---|
| 1000 - 4000 | 45.795 MOP | 45,795.42 MOP |
| 5000+ | 44.88 MOP | 44,879.62 MOP |
醞釀。 創造。 合作
免費加入
無隱藏費用！
技術文件
規格
Brand
STMicroelectronicsProduct Type
MDmesh Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-263
Series
STB11NM80
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
0.4Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
150W
Minimum Operating Temperature
-65°C
Typical Gate Charge Qg @ Vgs
43.6nC
Maximum Gate Source Voltage Vgs
30V
Forward Voltage Vf
0.86V
Maximum Operating Temperature
150°C
Height
4.37mm
Length
10.4mm
Standards/Approvals
No
Width
9.35mm
Automotive Standard
No
產品詳情
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
醞釀。 創造。 合作
免費加入
無隱藏費用！
