技術文件
規格
Brand
STMicroelectronicsProduct Type
Bipolar Transistor
Maximum DC Collector Current Idc
16A
Maximum Collector Emitter Voltage Vceo
700V
Package Type
TO-263
Mount Type
Surface
Transistor Configuration
Single
Maximum Power Dissipation Pd
80W
Transistor Polarity
NPN
Minimum DC Current Gain hFE
25
Maximum Emitter Base Voltage VEBO
9V
Minimum Operating Temperature
-65°C
Pin Count
3
Maximum Operating Temperature
150°C
Length
10.4mm
Height
15.85mm
Standards/Approvals
No
Width
4.6mm
Series
STB13007DT4
Automotive Standard
No
產品詳情
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure to enhance switching speeds.
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暫時無法取得庫存資訊。
P.O.A.
Each (On a Reel of 1000) (不含稅)
1000
P.O.A.
Each (On a Reel of 1000) (不含稅)
暫時無法取得庫存資訊。
1000
醞釀。 創造。 合作
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無隱藏費用！
技術文件
規格
Brand
STMicroelectronicsProduct Type
Bipolar Transistor
Maximum DC Collector Current Idc
16A
Maximum Collector Emitter Voltage Vceo
700V
Package Type
TO-263
Mount Type
Surface
Transistor Configuration
Single
Maximum Power Dissipation Pd
80W
Transistor Polarity
NPN
Minimum DC Current Gain hFE
25
Maximum Emitter Base Voltage VEBO
9V
Minimum Operating Temperature
-65°C
Pin Count
3
Maximum Operating Temperature
150°C
Length
10.4mm
Height
15.85mm
Standards/Approvals
No
Width
4.6mm
Series
STB13007DT4
Automotive Standard
No
產品詳情
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure to enhance switching speeds.
醞釀。 創造。 合作
免費加入
無隱藏費用！
