技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-263
Series
MDmesh DM2
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
290mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
90W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
20nC
Maximum Gate Source Voltage Vgs
-25, +25V
Forward Voltage Vf
1.3V
Maximum Operating Temperature
150°C
Height
4.6mm
Length
9.35mm
Standards/Approvals
No
Width
10.4mm
Automotive Standard
No
產品詳情
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
醞釀。 創造。 合作
免費加入
無隱藏費用！
暫時無法取得庫存資訊。
144.90 MOP
28.978 MOP Each (In a Pack of 5) (不含稅)
標準
5
144.90 MOP
28.978 MOP Each (In a Pack of 5) (不含稅)
暫時無法取得庫存資訊。
標準
5
| 數量 | 單價 | 每包 |
|---|---|---|
| 5 - 245 | 28.978 MOP | 144.89 MOP |
| 250 - 495 | 28.277 MOP | 141.38 MOP |
| 500+ | 27.824 MOP | 139.12 MOP |
醞釀。 創造。 合作
免費加入
無隱藏費用！
技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-263
Series
MDmesh DM2
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
290mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
90W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
20nC
Maximum Gate Source Voltage Vgs
-25, +25V
Forward Voltage Vf
1.3V
Maximum Operating Temperature
150°C
Height
4.6mm
Length
9.35mm
Standards/Approvals
No
Width
10.4mm
Automotive Standard
No
產品詳情
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
醞釀。 創造。 合作
免費加入
無隱藏費用！
