技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
13A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-263
Series
STB
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
280mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
110W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
16.8nC
Forward Voltage Vf
1.6V
Maximum Gate Source Voltage Vgs
25V
Maximum Operating Temperature
150°C
Height
4.37mm
Length
10.4mm
Standards/Approvals
No
Width
9.35mm
Automotive Standard
No
原產地
China
產品詳情
The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.
暫時無法取得庫存資訊。
18,631.40 MOP
18.631 MOP Each (On a Reel of 1000) (不含稅)
1000
18,631.40 MOP
18.631 MOP Each (On a Reel of 1000) (不含稅)
暫時無法取得庫存資訊。
1000
| 數量 | 單價 | 每卷 |
|---|---|---|
| 1000 - 1000 | 18.631 MOP | 18,631.44 MOP |
| 2000 - 3000 | 18.072 MOP | 18,072.50 MOP |
| 4000+ | 17.53 MOP | 17,530.25 MOP |
技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
13A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-263
Series
STB
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
280mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
110W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
16.8nC
Forward Voltage Vf
1.6V
Maximum Gate Source Voltage Vgs
25V
Maximum Operating Temperature
150°C
Height
4.37mm
Length
10.4mm
Standards/Approvals
No
Width
9.35mm
Automotive Standard
No
原產地
China
產品詳情
The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.