技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
25A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-263
Series
ST
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
0.115Ω
Channel Mode
Depletion
Maximum Power Dissipation Pd
190W
Typical Gate Charge Qg @ Vgs
35nC
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Length
10.4mm
Height
15.85mm
Standards/Approvals
No
Automotive Standard
No
產品詳情
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market.
暫時無法取得庫存資訊。
35,120.10 MOP
35.12 MOP Each (On a Reel of 1000) (不含稅)
1000
35,120.10 MOP
35.12 MOP Each (On a Reel of 1000) (不含稅)
暫時無法取得庫存資訊。
1000
| 數量 | 單價 | 每卷 |
|---|---|---|
| 1000 - 4000 | 35.12 MOP | 35,120.06 MOP |
| 5000+ | 34.418 MOP | 34,417.67 MOP |
技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
25A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-263
Series
ST
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
0.115Ω
Channel Mode
Depletion
Maximum Power Dissipation Pd
190W
Typical Gate Charge Qg @ Vgs
35nC
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Length
10.4mm
Height
15.85mm
Standards/Approvals
No
Automotive Standard
No
產品詳情
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market.