技術文件
規格
Brand
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
10A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
420mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
110W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
16.5nC
Maximum Operating Temperature
150°C
Standards/Approvals
No
Width
6.2mm
Length
6.6mm
Height
2.17mm
Automotive Standard
No
產品詳情
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
暫時無法取得庫存資訊。
29,491.00 MOP
11.796 MOP Each (On a Reel of 2500) (不含稅)
2500
29,491.00 MOP
11.796 MOP Each (On a Reel of 2500) (不含稅)
暫時無法取得庫存資訊。
2500
| 數量 | 單價 | 每卷 |
|---|---|---|
| 2500 - 10000 | 11.796 MOP | 29,490.95 MOP |
| 12500+ | 11.443 MOP | 28,606.27 MOP |
技術文件
規格
Brand
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
10A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
420mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
110W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
16.5nC
Maximum Operating Temperature
150°C
Standards/Approvals
No
Width
6.2mm
Length
6.6mm
Height
2.17mm
Automotive Standard
No
產品詳情
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.