技術文件
規格
Brand
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
4A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
1.73Ω
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
30V
Forward Voltage Vf
1.5V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
5nC
Maximum Power Dissipation Pd
60W
Maximum Operating Temperature
150°C
Standards/Approvals
No
Width
6.2mm
Height
2.17mm
Length
6.6mm
Automotive Standard
No
產品詳情
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
暫時無法取得庫存資訊。
27,585.70 MOP
11.034 MOP Each (On a Reel of 2500) (不含稅)
2500
27,585.70 MOP
11.034 MOP Each (On a Reel of 2500) (不含稅)
暫時無法取得庫存資訊。
2500
| 數量 | 單價 | 每卷 |
|---|---|---|
| 2500 - 2500 | 11.034 MOP | 27,585.66 MOP |
| 5000 - 22500 | 10.703 MOP | 26,758.07 MOP |
| 25000+ | 10.382 MOP | 25,955.31 MOP |
技術文件
規格
Brand
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
4A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
1.73Ω
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
30V
Forward Voltage Vf
1.5V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
5nC
Maximum Power Dissipation Pd
60W
Maximum Operating Temperature
150°C
Standards/Approvals
No
Width
6.2mm
Height
2.17mm
Length
6.6mm
Automotive Standard
No
產品詳情
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.