技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-252
Series
STD
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
14nC
Maximum Gate Source Voltage Vgs
30V
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
70W
Maximum Operating Temperature
175°C
Height
2.4mm
Length
6.6mm
Standards/Approvals
UL
Width
6.2mm
Automotive Standard
AEC-Q101
產品詳情
The STMicroelectronics MOSFET device is an N-channel Power MOSFET developed using STMicroelectronics STripFET H5 technology. This device has been optimized to achieve very low on-state resistance.
醞釀。 創造。 合作
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暫時無法取得庫存資訊。
23,221.00 MOP
9.288 MOP Each (On a Reel of 2500) (不含稅)
2500
23,221.00 MOP
9.288 MOP Each (On a Reel of 2500) (不含稅)
暫時無法取得庫存資訊。
2500
| 數量 | 單價 | 每卷 |
|---|---|---|
| 2500 - 2500 | 9.288 MOP | 23,220.98 MOP |
| 5000 - 5000 | 9.01 MOP | 22,524.36 MOP |
| 7500+ | 8.739 MOP | 21,848.66 MOP |
醞釀。 創造。 合作
免費加入
無隱藏費用！
技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-252
Series
STD
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
14nC
Maximum Gate Source Voltage Vgs
30V
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
70W
Maximum Operating Temperature
175°C
Height
2.4mm
Length
6.6mm
Standards/Approvals
UL
Width
6.2mm
Automotive Standard
AEC-Q101
產品詳情
The STMicroelectronics MOSFET device is an N-channel Power MOSFET developed using STMicroelectronics STripFET H5 technology. This device has been optimized to achieve very low on-state resistance.
醞釀。 創造。 合作
免費加入
無隱藏費用！
