技術文件
規格
Brand
STMicroelectronicsProduct Type
Gate Driver Module
Output Current
6A
Pin Count
16
Package Type
SO-16
Fall Time
5ns
Driver Type
Gate Driver
Minimum Supply Voltage
3.3V
Number of Drivers
2
Maximum Supply Voltage
5V
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
175°C
Series
STDRI
Standards/Approvals
No
Automotive Standard
No
產品詳情
The STMicroelectronics STDRIVEG600 is a single chip half-bridge gate driver for enhancement mode GaN FETs or N-channel power MOSFET. The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V. The device is designed for driving high-speed GaN and Si FETs thanks to high current capability, short propagation delay and operation with supply voltage down to 5 V.
暫時無法取得庫存資訊。
45,865.00 MOP
18.346 MOP Each (On a Reel of 2500) (不含稅)
2500
45,865.00 MOP
18.346 MOP Each (On a Reel of 2500) (不含稅)
暫時無法取得庫存資訊。
2500
| 數量 | 單價 | 每卷 |
|---|---|---|
| 2500 - 10000 | 18.346 MOP | 45,864.98 MOP |
| 12500+ | 17.979 MOP | 44,947.52 MOP |
技術文件
規格
Brand
STMicroelectronicsProduct Type
Gate Driver Module
Output Current
6A
Pin Count
16
Package Type
SO-16
Fall Time
5ns
Driver Type
Gate Driver
Minimum Supply Voltage
3.3V
Number of Drivers
2
Maximum Supply Voltage
5V
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
175°C
Series
STDRI
Standards/Approvals
No
Automotive Standard
No
產品詳情
The STMicroelectronics STDRIVEG600 is a single chip half-bridge gate driver for enhancement mode GaN FETs or N-channel power MOSFET. The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V. The device is designed for driving high-speed GaN and Si FETs thanks to high current capability, short propagation delay and operation with supply voltage down to 5 V.