技術文件
規格
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
86A
Maximum Collector Emitter Voltage Vceo
650V
Number of Transistors
1
Package Type
TO-263
Pin Count
3
Maximum Gate Emitter Voltage VGEO
20 V
原產地
China
產品詳情
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the Advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
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P.O.A.
Each (On a Reel of 1000) (不含稅)
1000
P.O.A.
Each (On a Reel of 1000) (不含稅)
暫時無法取得庫存資訊。
1000
醞釀。 創造。 合作
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無隱藏費用！
技術文件
規格
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
86A
Maximum Collector Emitter Voltage Vceo
650V
Number of Transistors
1
Package Type
TO-263
Pin Count
3
Maximum Gate Emitter Voltage VGEO
20 V
原產地
China
產品詳情
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the Advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
醞釀。 創造。 合作
免費加入
無隱藏費用！
