技術文件
規格
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
7A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
56W
Package Type
TO-220FP
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
2.5V
Maximum Operating Temperature
150°C
Height
16.4mm
Length
10.4mm
Standards/Approvals
JEDEC JESD97
Width
4.6mm
Series
Powermesh
Automotive Standard
No
原產地
China
產品詳情
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
醞釀。 創造。 合作
免費加入
無隱藏費用！
暫時無法取得庫存資訊。
439.00 MOP
8.78 MOP Each (In a Tube of 50) (不含稅)
50
439.00 MOP
8.78 MOP Each (In a Tube of 50) (不含稅)
暫時無法取得庫存資訊。
50
| 數量 | 單價 | 每管子 |
|---|---|---|
| 50 - 50 | 8.78 MOP | 438.99 MOP |
| 100 - 150 | 8.59 MOP | 429.51 MOP |
| 200+ | 8.397 MOP | 419.83 MOP |
醞釀。 創造。 合作
免費加入
無隱藏費用！
技術文件
規格
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
7A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
56W
Package Type
TO-220FP
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
2.5V
Maximum Operating Temperature
150°C
Height
16.4mm
Length
10.4mm
Standards/Approvals
JEDEC JESD97
Width
4.6mm
Series
Powermesh
Automotive Standard
No
原產地
China
產品詳情
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
醞釀。 創造。 合作
免費加入
無隱藏費用！
