技術文件
規格
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
60A
Product Type
Trench Gate Field Stop IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
260W
Package Type
TO-3PF
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.3V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
15.7mm
Height
26.7mm
Standards/Approvals
ECOPACK
Series
V
Automotive Standard
No
產品詳情
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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暫時無法取得庫存資訊。
66.80 MOP
33.388 MOP Each (In a Pack of 2) (不含稅)
2
66.80 MOP
33.388 MOP Each (In a Pack of 2) (不含稅)
暫時無法取得庫存資訊。
2
| 數量 | 單價 | 每包 |
|---|---|---|
| 2 - 6 | 33.388 MOP | 66.78 MOP |
| 8 - 14 | 32.615 MOP | 65.23 MOP |
| 16+ | 32.049 MOP | 64.10 MOP |
醞釀。 創造。 合作
免費加入
無隱藏費用！
技術文件
規格
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
60A
Product Type
Trench Gate Field Stop IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
260W
Package Type
TO-3PF
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.3V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
15.7mm
Height
26.7mm
Standards/Approvals
ECOPACK
Series
V
Automotive Standard
No
產品詳情
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
醞釀。 創造。 合作
免費加入
無隱藏費用！
