技術文件
規格
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
20A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
25W
Package Type
TO-220
Mount Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Minimum Operating Temperature
-55°C
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.5V
Maximum Operating Temperature
150°C
Standards/Approvals
No
Width
4.6mm
Length
10.4mm
Height
9.15mm
Automotive Standard
No
原產地
Malaysia
產品詳情
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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544.10 MOP
10.882 MOP Each (In a Tube of 50) (不含稅)
50
544.10 MOP
10.882 MOP Each (In a Tube of 50) (不含稅)
暫時無法取得庫存資訊。
50
| 數量 | 單價 | 每管子 |
|---|---|---|
| 50 - 50 | 10.882 MOP | 544.10 MOP |
| 100 - 150 | 10.664 MOP | 533.18 MOP |
| 200+ | 10.449 MOP | 522.46 MOP |
醞釀。 創造。 合作
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無隱藏費用！
技術文件
規格
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
20A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
25W
Package Type
TO-220
Mount Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Minimum Operating Temperature
-55°C
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.5V
Maximum Operating Temperature
150°C
Standards/Approvals
No
Width
4.6mm
Length
10.4mm
Height
9.15mm
Automotive Standard
No
原產地
Malaysia
產品詳情
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
醞釀。 創造。 合作
免費加入
無隱藏費用！
