技術文件
規格
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
54A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
167W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
70ns
Maximum Gate Emitter Voltage VGEO
±20 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
2.7V
Maximum Operating Temperature
150°C
Height
20.15mm
Length
15.75mm
Standards/Approvals
JEDEC
Width
5.15mm
Series
SMPS
Automotive Standard
No
產品詳情
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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33.60 MOP
33.59 MOP Each (Supplied in a Tube) (不含稅)
生產包 (管子)
1
33.60 MOP
33.59 MOP Each (Supplied in a Tube) (不含稅)
暫時無法取得庫存資訊。
生產包 (管子)
1
| 數量 | 單價 |
|---|---|
| 1 - 7 | 33.59 MOP |
| 8 - 14 | 32.98 MOP |
| 15+ | 32.05 MOP |
醞釀。 創造。 合作
免費加入
無隱藏費用！
技術文件
規格
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
54A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
167W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
70ns
Maximum Gate Emitter Voltage VGEO
±20 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
2.7V
Maximum Operating Temperature
150°C
Height
20.15mm
Length
15.75mm
Standards/Approvals
JEDEC
Width
5.15mm
Series
SMPS
Automotive Standard
No
產品詳情
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
醞釀。 創造。 合作
免費加入
無隱藏費用！
