技術文件
規格
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
30A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
200W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Collector Emitter Saturation Voltage VceSAT
2.5V
Minimum Operating Temperature
-55°C
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Operating Temperature
150°C
Length
14.8mm
Height
20.15mm
Standards/Approvals
JEDEC Standard JESD97
Width
15.75mm
Automotive Standard
No
產品詳情
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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95.00 MOP
47.506 MOP Each (Supplied in a Tube) (不含稅)
生產包 (管子)
2
95.00 MOP
47.506 MOP Each (Supplied in a Tube) (不含稅)
暫時無法取得庫存資訊。
生產包 (管子)
2
| 數量 | 單價 | 每管子 |
|---|---|---|
| 2 - 6 | 47.506 MOP | 95.01 MOP |
| 8 - 14 | 46.321 MOP | 92.64 MOP |
| 16+ | 45.60 MOP | 91.20 MOP |
醞釀。 創造。 合作
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無隱藏費用！
技術文件
規格
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
30A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
200W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Collector Emitter Saturation Voltage VceSAT
2.5V
Minimum Operating Temperature
-55°C
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Operating Temperature
150°C
Length
14.8mm
Height
20.15mm
Standards/Approvals
JEDEC Standard JESD97
Width
15.75mm
Automotive Standard
No
產品詳情
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
醞釀。 創造。 合作
免費加入
無隱藏費用！
