技術文件
規格
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
120A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
469W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Minimum Operating Temperature
-40°C
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.3V
Maximum Operating Temperature
175°C
Height
20.15mm
Standards/Approvals
No
Series
Trench Gate Field Stop
Length
15.75mm
Automotive Standard
No
產品詳情
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
暫時無法取得庫存資訊。
49.30 MOP
49.26 MOP Each (不含稅)
標準
1
49.30 MOP
49.26 MOP Each (不含稅)
暫時無法取得庫存資訊。
標準
1
| 數量 | 單價 |
|---|---|
| 1 - 7 | 49.26 MOP |
| 8 - 14 | 48.02 MOP |
| 15+ | 47.30 MOP |
技術文件
規格
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
120A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
469W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Minimum Operating Temperature
-40°C
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.3V
Maximum Operating Temperature
175°C
Height
20.15mm
Standards/Approvals
No
Series
Trench Gate Field Stop
Length
15.75mm
Automotive Standard
No
產品詳情
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.