STMicroelectronics STGWT60H65DFB, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-3P, Through Hole

Name: STMicroelectronics STGWT60H65DFB, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-3P, Through Hole
Brand: STMicroelectronics
SKU: 8294666
Availability: LimitedAvailability

RS 庫存號: 829-4666品牌: STMicroelectronics製造商零件號: STGWT60H65DFB

查看IGBTs中的所有內容

技術文件

規格

Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

80A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

375W

Package Type

TO-3P

Mount Type

Through Hole

Channel Type

Type N

Pin Count

Switching Speed

1MHz

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Series

Automotive Standard

產品詳情

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.