技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
H2PAK
Series
DeepGate, STripFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
3.9mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
250W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
117nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
4.8mm
Length
10.4mm
Standards/Approvals
No
Width
10.57mm
Automotive Standard
No
產品詳情
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
暫時無法取得庫存資訊。
71.50 MOP
35.758 MOP Each (In a Pack of 2) (不含稅)
標準
2
71.50 MOP
35.758 MOP Each (In a Pack of 2) (不含稅)
暫時無法取得庫存資訊。
標準
2
| 數量 | 單價 | 每包 |
|---|---|---|
| 2 - 248 | 35.758 MOP | 71.52 MOP |
| 250 - 498 | 34.882 MOP | 69.76 MOP |
| 500+ | 34.264 MOP | 68.53 MOP |
技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
H2PAK
Series
DeepGate, STripFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
3.9mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
250W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
117nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
4.8mm
Length
10.4mm
Standards/Approvals
No
Width
10.57mm
Automotive Standard
No
產品詳情
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.