技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
H2PAK
Series
DeepGate, STripFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
3.9mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
250W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
117nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
4.8mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
產品詳情
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
暫時無法取得庫存資訊。
69.70 MOP
34.831 MOP Each (Supplied on a Reel) (不含稅)
生產包 (卷)
2
69.70 MOP
34.831 MOP Each (Supplied on a Reel) (不含稅)
暫時無法取得庫存資訊。
生產包 (卷)
2
| 數量 | 單價 | 每卷 |
|---|---|---|
| 2 - 248 | 34.831 MOP | 69.66 MOP |
| 250 - 498 | 33.955 MOP | 67.91 MOP |
| 500+ | 33.388 MOP | 66.78 MOP |
技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
H2PAK
Series
DeepGate, STripFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
3.9mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
250W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
117nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
4.8mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
產品詳情
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.