技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Series
STripFET H7
Package Type
H2PAK
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
2.3mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
315W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
180nC
Maximum Operating Temperature
175°C
Length
15.8mm
Standards/Approvals
No
Height
4.8mm
Automotive Standard
No
產品詳情
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
暫時無法取得庫存資訊。
101.10 MOP
50.546 MOP Each (In a Pack of 2) (不含稅)
標準
2
101.10 MOP
50.546 MOP Each (In a Pack of 2) (不含稅)
暫時無法取得庫存資訊。
標準
2
| 數量 | 單價 | 每包 |
|---|---|---|
| 2 - 248 | 50.546 MOP | 101.09 MOP |
| 250 - 498 | 49.258 MOP | 98.52 MOP |
| 500+ | 48.485 MOP | 96.97 MOP |
技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Series
STripFET H7
Package Type
H2PAK
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
2.3mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
315W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
180nC
Maximum Operating Temperature
175°C
Length
15.8mm
Standards/Approvals
No
Height
4.8mm
Automotive Standard
No
產品詳情
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.