技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
22A
Maximum Drain Source Voltage Vds
650V
Series
STI28
Package Type
I2PAK
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
150mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
170W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
36nC
Maximum Operating Temperature
150°C
Standards/Approvals
No
Width
4.6mm
Height
9.3mm
Length
10.4mm
Automotive Standard
No
產品詳情
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
暫時無法取得庫存資訊。
1,243.80 MOP
24.876 MOP Each (In a Tube of 50) (不含稅)
50
1,243.80 MOP
24.876 MOP Each (In a Tube of 50) (不含稅)
暫時無法取得庫存資訊。
50
| 數量 | 單價 | 每管子 |
|---|---|---|
| 50 - 50 | 24.876 MOP | 1,243.81 MOP |
| 100 - 150 | 24.336 MOP | 1,216.81 MOP |
| 200+ | 23.85 MOP | 1,192.50 MOP |
技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
22A
Maximum Drain Source Voltage Vds
650V
Series
STI28
Package Type
I2PAK
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
150mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
170W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
36nC
Maximum Operating Temperature
150°C
Standards/Approvals
No
Width
4.6mm
Height
9.3mm
Length
10.4mm
Automotive Standard
No
產品詳情
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.