技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
95A
Maximum Drain Source Voltage Vds
80V
Package Type
PowerFLAT
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
6.5Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
46nC
Maximum Power Dissipation Pd
127W
Minimum Operating Temperature
-55°C
Maximum Gate Source Voltage Vgs
20V
Maximum Operating Temperature
175°C
Standards/Approvals
No
Automotive Standard
AEC-Q101
產品詳情
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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暫時無法取得庫存資訊。
51,810.90 MOP
17.27 MOP Each (On a Reel of 3000) (不含稅)
3000
51,810.90 MOP
17.27 MOP Each (On a Reel of 3000) (不含稅)
暫時無法取得庫存資訊。
3000
| 數量 | 單價 | 每卷 |
|---|---|---|
| 3000 - 3000 | 17.27 MOP | 51,810.86 MOP |
| 6000 - 6000 | 16.752 MOP | 50,256.56 MOP |
| 9000+ | 16.25 MOP | 48,748.94 MOP |
醞釀。 創造。 合作
免費加入
無隱藏費用！
技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
95A
Maximum Drain Source Voltage Vds
80V
Package Type
PowerFLAT
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
6.5Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
46nC
Maximum Power Dissipation Pd
127W
Minimum Operating Temperature
-55°C
Maximum Gate Source Voltage Vgs
20V
Maximum Operating Temperature
175°C
Standards/Approvals
No
Automotive Standard
AEC-Q101
產品詳情
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
醞釀。 創造。 合作
免費加入
無隱藏費用！
