技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
5.5A
Maximum Drain Source Voltage Vds
25V
Package Type
SOT-223
Series
STN6N60M2
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
1.25Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
6W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
6nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Height
1.8mm
Length
6.8mm
Standards/Approvals
No
Width
6.48mm
Automotive Standard
No
原產地
China
產品詳情
The STMicroelectronics device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
暫時無法取得庫存資訊。
15,017.60 MOP
3.754 MOP Each (On a Reel of 4000) (不含稅)
4000
15,017.60 MOP
3.754 MOP Each (On a Reel of 4000) (不含稅)
暫時無法取得庫存資訊。
4000
| 數量 | 單價 | 每卷 |
|---|---|---|
| 4000 - 16000 | 3.754 MOP | 15,017.58 MOP |
| 20000+ | 3.679 MOP | 14,717.09 MOP |
技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
5.5A
Maximum Drain Source Voltage Vds
25V
Package Type
SOT-223
Series
STN6N60M2
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
1.25Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
6W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
6nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Height
1.8mm
Length
6.8mm
Standards/Approvals
No
Width
6.48mm
Automotive Standard
No
原產地
China
產品詳情
The STMicroelectronics device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.