技術文件
規格
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
4.2mΩ
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.2V
Typical Gate Charge Qg @ Vgs
127nC
Maximum Power Dissipation Pd
250W
Maximum Operating Temperature
175°C
Standards/Approvals
No
Automotive Standard
No
產品詳情
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for Faster and more efficient switching.
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暫時無法取得庫存資訊。
1,263.20 MOP
25.264 MOP Each (In a Tube of 50) (不含稅)
50
1,263.20 MOP
25.264 MOP Each (In a Tube of 50) (不含稅)
暫時無法取得庫存資訊。
50
| 數量 | 單價 | 每管子 |
|---|---|---|
| 50 - 100 | 25.264 MOP | 1,263.19 MOP |
| 150 - 200 | 24.509 MOP | 1,225.47 MOP |
| 250+ | 23.774 MOP | 1,188.68 MOP |
醞釀。 創造。 合作
免費加入
無隱藏費用！
技術文件
規格
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
4.2mΩ
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.2V
Typical Gate Charge Qg @ Vgs
127nC
Maximum Power Dissipation Pd
250W
Maximum Operating Temperature
175°C
Standards/Approvals
No
Automotive Standard
No
產品詳情
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for Faster and more efficient switching.
醞釀。 創造。 合作
免費加入
無隱藏費用！
