技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
4.2mΩ
Typical Gate Charge Qg @ Vgs
127nC
Maximum Power Dissipation Pd
250W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Standards/Approvals
No
Automotive Standard
No
產品詳情
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for Faster and more efficient switching.
醞釀。 創造。 合作
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暫時無法取得庫存資訊。
72.40 MOP
36.222 MOP Each (In a Pack of 2) (不含稅)
標準
2
72.40 MOP
36.222 MOP Each (In a Pack of 2) (不含稅)
暫時無法取得庫存資訊。
標準
2
| 數量 | 單價 | 每包 |
|---|---|---|
| 2 - 4 | 36.222 MOP | 72.44 MOP |
| 6 - 8 | 35.552 MOP | 71.10 MOP |
| 10 - 18 | 34.779 MOP | 69.56 MOP |
| 20 - 28 | 34.058 MOP | 68.12 MOP |
| 30+ | 33.44 MOP | 66.88 MOP |
醞釀。 創造。 合作
免費加入
無隱藏費用！
技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
4.2mΩ
Typical Gate Charge Qg @ Vgs
127nC
Maximum Power Dissipation Pd
250W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Standards/Approvals
No
Automotive Standard
No
產品詳情
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for Faster and more efficient switching.
醞釀。 創造。 合作
免費加入
無隱藏費用！
