技術文件
規格
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
34 A
Maximum Drain Source Voltage
650 V
Series
MDmesh DM2
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
93 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Length
10.4mm
Number of Elements per Chip
1
Width
4.6mm
Typical Gate Charge @ Vgs
60 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
15.75mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
原產地
China
產品詳情
醞釀。 創造。 合作
免費加入
無隱藏費用！
暫時無法取得庫存資訊。
P.O.A.
Each (In a Tube of 50) (不含稅)
50
P.O.A.
Each (In a Tube of 50) (不含稅)
暫時無法取得庫存資訊。
50
醞釀。 創造。 合作
免費加入
無隱藏費用！
技術文件
規格
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
34 A
Maximum Drain Source Voltage
650 V
Series
MDmesh DM2
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
93 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Length
10.4mm
Number of Elements per Chip
1
Width
4.6mm
Typical Gate Charge @ Vgs
60 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
15.75mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
原產地
China
產品詳情
醞釀。 創造。 合作
免費加入
無隱藏費用！
