技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
9A
Maximum Drain Source Voltage Vds
950V
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
1.25Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
13nC
Maximum Power Dissipation Pd
90W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Length
10.4mm
Height
15.75mm
Standards/Approvals
No
Automotive Standard
No
產品詳情
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications Product status link requiring superior power density and high efficiency.
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679.00 MOP
13.58 MOP Each (In a Tube of 50) (不含稅)
50
679.00 MOP
13.58 MOP Each (In a Tube of 50) (不含稅)
暫時無法取得庫存資訊。
50
| 數量 | 單價 | 每管子 |
|---|---|---|
| 50 - 50 | 13.58 MOP | 679.00 MOP |
| 100 - 150 | 13.174 MOP | 658.70 MOP |
| 200+ | 12.778 MOP | 638.91 MOP |
醞釀。 創造。 合作
免費加入
無隱藏費用！
技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
9A
Maximum Drain Source Voltage Vds
950V
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
1.25Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
13nC
Maximum Power Dissipation Pd
90W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Length
10.4mm
Height
15.75mm
Standards/Approvals
No
Automotive Standard
No
產品詳情
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications Product status link requiring superior power density and high efficiency.
醞釀。 創造。 合作
免費加入
無隱藏費用！
