技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-220
Series
STP
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
140W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
80nC
Maximum Gate Source Voltage Vgs
30V
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
4.6mm
Length
28.9mm
Standards/Approvals
UL
Width
10.4mm
Automotive Standard
AEC-Q101
產品詳情
The STMicroelectronics very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency. This MOSFET is Recommended for flyback topology, based applications such as LED lighting, chargers and adapters. Provide more power density reducing both BOM cost and size of the board.
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270.00 MOP
53.998 MOP Each (In a Pack of 5) (不含稅)
標準
5
270.00 MOP
53.998 MOP Each (In a Pack of 5) (不含稅)
暫時無法取得庫存資訊。
標準
5
| 數量 | 單價 | 每包 |
|---|---|---|
| 5 - 5 | 53.998 MOP | 269.99 MOP |
| 10 - 10 | 52.391 MOP | 261.95 MOP |
| 15 - 15 | 50.804 MOP | 254.02 MOP |
| 20 - 20 | 49.279 MOP | 246.39 MOP |
| 25+ | 47.815 MOP | 239.08 MOP |
醞釀。 創造。 合作
免費加入
無隱藏費用！
技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-220
Series
STP
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
140W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
80nC
Maximum Gate Source Voltage Vgs
30V
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
4.6mm
Length
28.9mm
Standards/Approvals
UL
Width
10.4mm
Automotive Standard
AEC-Q101
產品詳情
The STMicroelectronics very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency. This MOSFET is Recommended for flyback topology, based applications such as LED lighting, chargers and adapters. Provide more power density reducing both BOM cost and size of the board.
醞釀。 創造。 合作
免費加入
無隱藏費用！
