技術文件
規格
Brand
STMicroelectronicsProduct Type
Diode
Mount Type
Through Hole
Package Type
TO-220
Maximum Continuous Forward Current If
12A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Single
Series
STPSC12065
Pin Count
2
Peak Reverse Current Ir
50μA
Maximum Forward Voltage Vf
1.65V
Peak Non-Repetitive Forward Surge Current Ifsm
220A
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
175°C
Length
15.95mm
Height
4.3mm
Standards/Approvals
No
Automotive Standard
No
產品詳情
The STMicroelectronics 650V power schottky silicon carbide diode is an ultra high performance power schottky diode. It is manufactured using a silicon carbide substrate. Its high forward surge capability ensures good robustness during transient phases.
暫時無法取得庫存資訊。
1,232.50 MOP
24.65 MOP Each (In a Tube of 50) (不含稅)
50
1,232.50 MOP
24.65 MOP Each (In a Tube of 50) (不含稅)
暫時無法取得庫存資訊。
50
| 數量 | 單價 | 每管子 |
|---|---|---|
| 50 - 50 | 24.65 MOP | 1,232.48 MOP |
| 100 - 150 | 23.91 MOP | 1,195.48 MOP |
| 200+ | 23.192 MOP | 1,159.62 MOP |
技術文件
規格
Brand
STMicroelectronicsProduct Type
Diode
Mount Type
Through Hole
Package Type
TO-220
Maximum Continuous Forward Current If
12A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Single
Series
STPSC12065
Pin Count
2
Peak Reverse Current Ir
50μA
Maximum Forward Voltage Vf
1.65V
Peak Non-Repetitive Forward Surge Current Ifsm
220A
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
175°C
Length
15.95mm
Height
4.3mm
Standards/Approvals
No
Automotive Standard
No
產品詳情
The STMicroelectronics 650V power schottky silicon carbide diode is an ultra high performance power schottky diode. It is manufactured using a silicon carbide substrate. Its high forward surge capability ensures good robustness during transient phases.