技術文件
規格
Brand
STMicroelectronicsProduct Type
Diode
Mount Type
Surface
Package Type
TO-263
Maximum Continuous Forward Current If
4A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Single
Series
STPSC
Pin Count
2
Peak Reverse Current Ir
35μA
Maximum Forward Voltage Vf
2.25V
Minimum Operating Temperature
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
200A
Maximum Operating Temperature
175°C
Length
28.25mm
Height
4.5mm
Standards/Approvals
No
Automotive Standard
No
產品詳情
The STMicroelectronics 650V high surge silicon carbide power schottky diode has a current rating of 4A. It is an ultra high performance power schottky diode. It is manufactured using a silicon carbide substrate. Its high forward surge capability ensures good robustness during transient phases. This SiC diode will boost the performance in hard switching condition.
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28,598.10 MOP
11.439 MOP Each (On a Reel of 2500) (不含稅)
2500
28,598.10 MOP
11.439 MOP Each (On a Reel of 2500) (不含稅)
暫時無法取得庫存資訊。
2500
| 數量 | 單價 | 每卷 |
|---|---|---|
| 2500 - 10000 | 11.439 MOP | 28,598.13 MOP |
| 12500+ | 11.211 MOP | 28,026.30 MOP |
醞釀。 創造。 合作
免費加入
無隱藏費用！
技術文件
規格
Brand
STMicroelectronicsProduct Type
Diode
Mount Type
Surface
Package Type
TO-263
Maximum Continuous Forward Current If
4A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Single
Series
STPSC
Pin Count
2
Peak Reverse Current Ir
35μA
Maximum Forward Voltage Vf
2.25V
Minimum Operating Temperature
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
200A
Maximum Operating Temperature
175°C
Length
28.25mm
Height
4.5mm
Standards/Approvals
No
Automotive Standard
No
產品詳情
The STMicroelectronics 650V high surge silicon carbide power schottky diode has a current rating of 4A. It is an ultra high performance power schottky diode. It is manufactured using a silicon carbide substrate. Its high forward surge capability ensures good robustness during transient phases. This SiC diode will boost the performance in hard switching condition.
醞釀。 創造。 合作
免費加入
無隱藏費用！
