技術文件
規格
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
72A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-247-4
Mount Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance Rds
39mΩ
產品詳情
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the Mesh DM6 fast recovery diode series. Compared with the previous Mesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies andZVS phase-shift converters.
醞釀。 創造。 合作
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暫時無法取得庫存資訊。
P.O.A.
Each (In a Tube of 30) (不含稅)
30
P.O.A.
Each (In a Tube of 30) (不含稅)
暫時無法取得庫存資訊。
30
醞釀。 創造。 合作
免費加入
無隱藏費用！
技術文件
規格
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
72A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-247-4
Mount Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance Rds
39mΩ
產品詳情
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the Mesh DM6 fast recovery diode series. Compared with the previous Mesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies andZVS phase-shift converters.
醞釀。 創造。 合作
免費加入
無隱藏費用！
