技術文件
規格
Brand
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
30V
Series
STW
Package Type
TO-247
Mount Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.5V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
118nC
Maximum Power Dissipation Pd
480W
Maximum Operating Temperature
150°C
Standards/Approvals
UL
Width
15.8mm
Height
5.1mm
Length
40.92mm
Automotive Standard
AEC-Q101
產品詳情
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series, Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
暫時無法取得庫存資訊。
140.70 MOP
140.66 MOP Each (Supplied in a Tray) (不含稅)
生產包 (盤)
1
140.70 MOP
140.66 MOP Each (Supplied in a Tray) (不含稅)
暫時無法取得庫存資訊。
生產包 (盤)
1
| 數量 | 單價 |
|---|---|
| 1 - 4 | 140.66 MOP |
| 5 - 9 | 140.56 MOP |
| 10 - 14 | 140.35 MOP |
| 15 - 19 | 140.25 MOP |
| 20+ | 140.15 MOP |
技術文件
規格
Brand
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
30V
Series
STW
Package Type
TO-247
Mount Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.5V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
118nC
Maximum Power Dissipation Pd
480W
Maximum Operating Temperature
150°C
Standards/Approvals
UL
Width
15.8mm
Height
5.1mm
Length
40.92mm
Automotive Standard
AEC-Q101
產品詳情
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series, Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.